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MTP1N100E
MTP1N100E
MOSFETs MTP1N100E
onsemi
MTP1N100E
--
Diodes, Transistors and Thyristors
MOSFETs
MTP1N100E.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.82(Max)
Package Height9.28(Max)
Package Length10.28(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Maximum IDSS (uA)10
Process TechnologyTMOS
Standard Package NameTO-220
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)34
Typical Rise Time (ns)12
Number of Elements per Chip1
Maximum Power Dissipation (mW)75000
Typical Gate Charge @ 10V (nC)14.6
Typical Gate Charge @ Vgs (nC)14.6@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)59
Typical Turn-On Delay Time (ns)9
Maximum Drain Source Voltage (V)1000
Typical Gate Plateau Voltage (V)5.2
Typical Turn-Off Delay Time (ns)28
Maximum Diode Forward Voltage (V)1
Typical Diode Forward Voltage (V)0.764
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate Threshold Voltage (V)3
Typical Reverse Recovery Time (ns)655
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)587@25V
Typical Reverse Recovery Charge (nC)957
Maximum Drain Source Resistance (mOhm)9000@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)3
Typical Reverse Transfer Capacitance @ Vds (pF)12.2@25V
Description
Trans MOSFET N-CH Si 1KV 1A 3-Pin(3+Tab) TO-220AB
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