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MTP23P06VG
MTP23P06VG
MOSFETs MTP23P06VG
onsemi
MTP23P06VG
--
Diodes, Transistors and Thyristors
MOSFETs
MTP23P06VG.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width4.83(Max)
Package Height9.28(Max)
Package Length10.53(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Maximum IDSS (uA)10
Standard Package NameTO-220
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)62
Typical Rise Time (ns)98.3
Number of Elements per Chip1
Maximum Power Dissipation (mW)90000
Typical Gate Charge @ 10V (nC)38
Typical Gate Charge @ Vgs (nC)38@10V
Maximum Gate Source Voltage (V)±15
Typical Output Capacitance (pF)380
Typical Turn-On Delay Time (ns)13.8
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)6.8
Typical Turn-Off Delay Time (ns)41
Maximum Diode Forward Voltage (V)3.5
Typical Diode Forward Voltage (V)2.2
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate Threshold Voltage (V)2.8
Typical Reverse Recovery Time (ns)142.2
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)23
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)1160@25V
Typical Reverse Recovery Charge (nC)804
Maximum Drain Source Resistance (mOhm)120@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)15
Maximum Pulsed Drain Current @ TC=25°C (A)81
Typical Reverse Transfer Capacitance @ Vds (pF)105@25V
Description
Trans MOSFET P-CH 60V 23A 3-Pin(3+Tab) TO-220AB Tube
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