Product Attribute | Attribute Value |
Tab | Tab |
PPAP | No |
EU RoHS | Supplier Unconfirmed |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Pin Count | 3 |
Automotive | No |
PCB changed | 3 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Product Category | Power MOSFET |
Supplier Package | TO-220AB |
Maximum IDSS (uA) | 1 |
Process Technology | TMOS IV |
Standard Package Name | TO-220 |
Typical Fall Time (ns) | 50 |
Typical Rise Time (ns) | 95 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 40000 |
Typical Gate Charge @ Vgs (nC) | 7.2@5V |
Maximum Gate Source Voltage (V) | ±15 |
Typical Turn-On Delay Time (ns) | 20 |
Maximum Drain Source Voltage (V) | 60 |
Typical Turn-Off Delay Time (ns) | 38 |
Maximum Gate Threshold Voltage (V) | 2 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -65 |
Maximum Continuous Drain Current (A) | 12 |
Typical Input Capacitance @ Vds (pF) | 1000@0V|400@25V |
Maximum Drain Source Resistance (mOhm) | 180@5V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |