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NDC652P
NDC652P
MOSFETs NDC652P
onsemi
NDC652P
--
Diodes, Transistors and Thyristors
MOSFETs
NDC652P.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Triple Drain Dual Source
Package Width1.7(Max)
Package Height1(Max)
Package Length3(Max)
Product CategoryPower MOSFET
Supplier PackageSuperSOT
Process TechnologyDMOS
Typical Fall Time (ns)19
Typical Rise Time (ns)26
Number of Elements per Chip1
Maximum Power Dissipation (mW)1600
Typical Gate Charge @ 10V (nC)10.5
Typical Gate Charge @ Vgs (nC)10.5@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)22
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.4
Typical Input Capacitance @ Vds (pF)290@15V
Maximum Drain Source Resistance (MOhm)110@10V
Description
Trans MOSFET P-CH 30V 2.4A 6-Pin SuperSOT T/R
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