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NDD01N60T4G
NDD01N60T4G
MOSFETs NDD01N60T4G
onsemi
NDD01N60T4G
--
Diodes, Transistors and Thyristors
MOSFETs
NDD01N60T4G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)21.3
Typical Rise Time (ns)5.1
Number of Elements per Chip1
Maximum Power Dissipation (mW)46000
Typical Gate Charge @ 10V (nC)7.2
Typical Gate Charge @ Vgs (nC)7.2@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)16.5
Maximum Gate Threshold Voltage (V)3.7
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.5
Typical Input Capacitance @ Vds (pF)160@25V
Maximum Drain Source Resistance (MOhm)8500@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 600V 1.5A 3-Pin(2+Tab) DPAK T/R
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