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NDS356P
NDS356P
MOSFETs NDS356P
onsemi
NDS356P
--
Diodes, Transistors and Thyristors
MOSFETs
NDS356P.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width1.4
Package Height0.94
Package Length2.92
Product CategoryPower MOSFET
Supplier PackageSuperSOT
Process TechnologyDMOS
Standard Package NameSOT
Typical Fall Time (ns)41
Typical Rise Time (ns)17
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Typical Gate Charge @ Vgs (nC)3.5@5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)7
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)56
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.1
Typical Input Capacitance @ Vds (pF)180@10V
Maximum Drain Source Resistance (MOhm)210@10V
Description
Trans MOSFET P-CH 20V 1.1A 3-Pin SuperSOT
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