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NDS7002A
NDS7002A
MOSFETs NDS7002A
onsemi
NDS7002A
--
Diodes, Transistors and Thyristors
MOSFETs
NDS7002A.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Product CategorySmall Signal
Supplier PackageSOT-23
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameSOT
Number of Elements per Chip1
Maximum Power Dissipation (mW)300
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)11
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)4.5
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.88
Maximum Gate Threshold Voltage (V)2.5
Minimum Gate Threshold Voltage (V)1
Typical Gate Threshold Voltage (V)2.1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)0.28
Operating Junction Temperature (°C)-65 to 150
Typical Input Capacitance @ Vds (pF)20@25V
Maximum Drain Source Resistance (mOhm)2000@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)1.5
Typical Reverse Transfer Capacitance @ Vds (pF)4@25V
Description
Trans MOSFET N-CH 60V 0.28A 3-Pin SOT-23 T/R
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