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NIC9N05ATS1
NIC9N05ATS1
MOSFETs NIC9N05ATS1
onsemi
NIC9N05ATS1
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Diodes, Transistors and Thyristors
MOSFETs
NIC9N05ATS1.pdf
Specification
Product AttributeAttribute Value
PPAPYes
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveYes
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain
Product CategoryPower MOSFET
Supplier PackageDie
Maximum IDSS (uA)10
Standard Package NameDie
Number of Elements per Chip1
Maximum Gate Source Voltage (V)±15
Maximum Drain Source Voltage (V)59
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Drain Source Resistance (mOhm)125@10V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N-CH 59V Automotive Die T/R
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