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NIF9N05CLT1G
NIF9N05CLT1G
MOSFETs NIF9N05CLT1G
onsemi
NIF9N05CLT1G
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Diodes, Transistors and Thyristors
MOSFETs
NIF9N05CLT1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain
Package Width3.5
Package Height1.57
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageSOT-223
Maximum IDSS (uA)10
Standard Package NameSOT
Typical Fall Time (ns)1120|1273|1000
Typical Rise Time (ns)1418|1165|290
Number of Elements per Chip1
Maximum Power Dissipation (mW)1690
Typical Gate Charge @ Vgs (nC)4.5@4.5V|3.9@4.5V
Maximum Gate Source Voltage (V)±15
Typical Turn-On Delay Time (ns)275|242|107
Maximum Drain Source Voltage (V)59
Typical Turn-Off Delay Time (ns)780|906|1540
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.6
Typical Input Capacitance @ Vds (pF)155@35V|170@25V
Maximum Drain Source Resistance (mOhm)125@10V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N-CH 59V 2.6A Automotive 4-Pin(3+Tab) SOT-223 T/R
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