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NTA4151PT1G
NTA4151PT1G
MOSFETs NTA4151PT1G
onsemi
NTA4151PT1G
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Diodes, Transistors and Thyristors
MOSFETs
NTA4151PT1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width0.8
Package Height0.75
Package Length1.6
Product CategorySmall Signal
Supplier PackageSOT-416
Maximum IDSS (uA)0.1
Standard Package NameSOT
Typical Fall Time (ns)20.4
Typical Rise Time (ns)8.2
Number of Elements per Chip1
Maximum Power Dissipation (mW)301
Typical Gate Charge @ Vgs (nC)2.1@4.5V
Maximum Gate Source Voltage (V)±6
Typical Output Capacitance (pF)28
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)20
Typical Gate Plateau Voltage (V)1.35
Typical Turn-Off Delay Time (ns)29
Maximum Diode Forward Voltage (V)1.1
Typical Diode Forward Voltage (V)0.72
Typical Gate to Drain Charge (nC)0.5
Maximum Gate Threshold Voltage (V)1.2
Minimum Gate Threshold Voltage (V)0.45
Typical Gate to Source Charge (nC)0.325
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.76
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)156@5V
Maximum Drain Source Resistance (mOhm)360@4.5V
Maximum Gate Source Leakage Current (nA)10000
Maximum Positive Gate Source Voltage (V)6
Maximum Pulsed Drain Current @ TC=25°C (A)1
Maximum Power Dissipation on PCB @ TC=25°C (W)0.301
Typical Reverse Transfer Capacitance @ Vds (pF)18@5V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)0.76
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)415
Description
Trans MOSFET P-CH 20V 0.76A 3-Pin SOT-416 T/R
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