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NTB011N15MC
NTB011N15MC
MOSFETs NTB011N15MC
onsemi
NTB011N15MC
--
Diodes, Transistors and Thyristors
MOSFETs
NTB011N15MC.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Process TechnologyPowerTrench
Typical Fall Time (ns)5.1
Typical Rise Time (ns)14
Number of Elements per Chip1
Maximum Power Dissipation (mW)3750
Typical Gate Charge @ 10V (nC)37
Typical Gate Charge @ Vgs (nC)37@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)19
Maximum Drain Source Voltage (V)150
Typical Turn-Off Delay Time (ns)28
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)12.5
Typical Input Capacitance @ Vds (pF)2810@75V
Maximum Drain Source Resistance (MOhm)10.9@10V
Description
Trans MOSFET N-CH 150V 12.5A T/R
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