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NTB30N20T4G
NTB30N20T4G
MOSFETs NTB30N20T4G
onsemi
NTB30N20T4G
--
Diodes, Transistors and Thyristors
MOSFETs
NTB30N20T4G.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.29(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)24|88
Typical Rise Time (ns)20|70
Number of Elements per Chip1
Maximum Power Dissipation (mW)214000
Typical Gate Charge @ 10V (nC)75
Typical Gate Charge @ Vgs (nC)75@10V|48@5V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)10|12
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)40|82
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)30
Typical Input Capacitance @ Vds (pF)2335@25V
Maximum Drain Source Resistance (mOhm)81@10V
Description
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) D2PAK T/R
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