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NTB6411ANT4G
NTB6411ANT4G
MOSFETs NTB6411ANT4G
onsemi
NTB6411ANT4G
--
Diodes, Transistors and Thyristors
MOSFETs
NTB6411ANT4G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.29(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)157
Typical Rise Time (ns)144
Number of Elements per Chip1
Maximum Power Dissipation (mW)217000
Typical Gate Charge @ 10V (nC)100
Typical Gate Charge @ Vgs (nC)100@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)107
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)77
Typical Input Capacitance @ Vds (pF)3700@25V
Maximum Drain Source Resistance (MOhm)14@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 77A 3-Pin(2+Tab) D2PAK T/R
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