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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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NTBG160N120SC1
NTBG160N120SC1
MOSFETs NTBG160N120SC1
onsemi
NTBG160N120SC1
--
Diodes, Transistors and Thyristors
MOSFETs
NTBG160N120SC1.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSiC
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed7
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Hex Source
Package Width9.2
Package Height4.5
Package Length9.9
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)10
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)7.68
Typical Rise Time (ns)2.27
Number of Elements per Chip1
Maximum Power Dissipation (mW)238000
Typical Gate Charge @ Vgs (nC)24.1@20V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8.17
Maximum Drain Source Voltage (V)1200
Typical Turn-Off Delay Time (ns)9.4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)31
Typical Input Capacitance @ Vds (pF)690@1000V
Maximum Drain Source Resistance (mOhm)161(Typ)@20V
Maximum Gate Source Leakage Current (nA)250
Description
Trans MOSFET N-CH SiC 1.2KV 31A 8-Pin(7+Tab) D2PAK T/R
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