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NTD12N10-1G
NTD12N10-1G
MOSFETs NTD12N10-1G
onsemi
NTD12N10-1G
--
Diodes, Transistors and Thyristors
MOSFETs
NTD12N10-1G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.38(Max)
Package Height6.35(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageIPAK
Standard Package NameTO-251
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)32
Typical Rise Time (ns)30
Number of Elements per Chip1
Maximum Power Dissipation (mW)1760
Typical Gate Charge @ 10V (nC)14
Typical Gate Charge @ Vgs (nC)14@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)22
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)12
Typical Input Capacitance @ Vds (pF)390@25V
Maximum Drain Source Resistance (mOhm)165@10V
Description
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) IPAK Tube
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