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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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NTD4809NA-35G
NTD4809NA-35G
MOSFETs NTD4809NA-35G
onsemi
NTD4809NA-35G
--
Diodes, Transistors and Thyristors
MOSFETs
NTD4809NA-35G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.38(Max)
Package Height6.22(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageIPAK
Maximum IDSS (uA)1
Standard Package NameTO-251
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)2.8|5.3
Typical Rise Time (ns)21.3|22.7
Number of Elements per Chip1
Maximum Power Dissipation (mW)1300
Typical Gate Charge @ Vgs (nC)11@4.5V|25@11.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7|12.3
Maximum Drain Source Voltage (V)25
Typical Turn-Off Delay Time (ns)15.1|25.3
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)11.5
Typical Input Capacitance @ Vds (pF)1456@12V
Maximum Drain Source Resistance (MOhm)9@11.5V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 25V 11.5A 3-Pin(3+Tab) IPAK Rail
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