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MOSFETs NTD4809NH-35G
onsemi
NTD4809NH-35G
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 2.38(Max) |
| Package Height | 6.22(Max) |
| Package Length | 6.73(Max) |
| Product Category | Power MOSFET |
| Supplier Package | IPAK |
| Standard Package Name | TO-251 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 5|3 |
| Typical Rise Time (ns) | 20|18 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2000 |
| Typical Gate Charge @ Vgs (nC) | 12.5@4.5V|29.3@11.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 331 |
| Typical Turn-On Delay Time (ns) | 7|12 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 14|22 |
| Typical Gate to Drain Charge (nC) | 5.1 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Typical Gate to Source Charge (nC) | 5.3 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 11.5 |
| Typical Input Capacitance @ Vds (pF) | 1596@12V |
| Typical Reverse Recovery Charge (nC) | 7.5 |
| Maximum Drain Source Resistance (MOhm) | 9@11.5V |
| Description |
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