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NTD4960N-35G
NTD4960N-35G
MOSFETs NTD4960N-35G
onsemi
NTD4960N-35G
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Diodes, Transistors and Thyristors
MOSFETs
NTD4960N-35G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.38(Max)
Package Height6.22(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageIPAK
Standard Package NameTO-251
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)4
Typical Rise Time (ns)20
Number of Elements per Chip1
Maximum Power Dissipation (mW)1680
Typical Gate Charge @ Vgs (nC)11@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)15
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)11.1
Typical Input Capacitance @ Vds (pF)1300@15V
Maximum Drain Source Resistance (MOhm)8@10V
Description
Trans MOSFET N-CH 30V 11.1A 3-Pin(3+Tab) IPAK Tube
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