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NTE4153NT1G
NTE4153NT1G
MOSFETs NTE4153NT1G
onsemi
NTE4153NT1G
--
Diodes, Transistors and Thyristors
MOSFETs
NTE4153NT1G.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width0.85
Package Height0.7
Package Length1.6
Product CategorySmall Signal
Supplier PackageSC-89
Maximum IDSS (uA)100
Standard Package NameSC
Typical Fall Time (ns)7.6
Typical Rise Time (ns)4.4
Number of Elements per Chip1
Maximum Power Dissipation (mW)300
Typical Gate Charge @ Vgs (nC)1.82@4.5V
Maximum Gate Source Voltage (V)±6
Typical Output Capacitance (pF)16
Typical Turn-On Delay Time (ns)3.7
Maximum Drain Source Voltage (V)20
Typical Gate Plateau Voltage (V)1.35
Typical Turn-Off Delay Time (ns)25
Maximum Diode Forward Voltage (V)1.1
Typical Diode Forward Voltage (V)0.67
Typical Gate to Drain Charge (nC)0.42
Maximum Gate Threshold Voltage (V)1.1
Minimum Gate Threshold Voltage (V)0.45
Typical Gate Threshold Voltage (V)0.76
Typical Gate to Source Charge (nC)0.3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.915
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)110@16V
Maximum Drain Source Resistance (MOhm)230@4.5V
Maximum Gate Source Leakage Current (nA)1000
Maximum Positive Gate Source Voltage (V)6
Maximum Pulsed Drain Current @ TC=25°C (A)1.3
Maximum Power Dissipation on PCB @ TC=25°C (W)0.3
Typical Reverse Transfer Capacitance @ Vds (pF)12@16V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)0.915
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)400
Description
Trans MOSFET N-CH 20V 0.915A 3-Pin SC-89 T/R
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