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NTF2955T1G
NTF2955T1G
MOSFETs NTF2955T1G
onsemi
NTF2955T1G
--
Diodes, Transistors and Thyristors
MOSFETs
NTF2955T1G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Dual Drain
Package Width3.5
Package Height1.57
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageSOT-223
Maximum IDSS (uA)1
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)38
Typical Rise Time (ns)7.6
Number of Elements per Chip1
Maximum Power Dissipation (mW)2300
Typical Gate Charge @ 10V (nC)14.3
Typical Gate Charge @ Vgs (nC)14.3@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)165
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)4.2
Typical Turn-Off Delay Time (ns)65
Maximum Diode Forward Voltage (V)1.3
Typical Diode Forward Voltage (V)1.1
Typical Gate to Drain Charge (nC)5.2
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)2.3
Typical Reverse Recovery Time (ns)36
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.6
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)492@25V
Typical Reverse Recovery Charge (nC)0.139
Maximum Drain Source Resistance (mOhm)185@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)17
Maximum Power Dissipation on PCB @ TC=25°C (W)2.3
Typical Reverse Transfer Capacitance @ Vds (pF)50@25V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)2.6
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)150
Description
Trans MOSFET P-CH 60V 2.6A 4-Pin(3+Tab) SOT-223 T/R
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