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NTF6P02T3G
NTF6P02T3G
MOSFETs NTF6P02T3G
onsemi
NTF6P02T3G
--
Diodes, Transistors and Thyristors
MOSFETs
NTF6P02T3G.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Dual Drain
Package Width3.5
Package Height1.57
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageSOT-223
Maximum IDSS (uA)1
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)60|50
Typical Rise Time (ns)30|25
Number of Elements per Chip1
Maximum Power Dissipation (mW)8300
Typical Gate Charge @ Vgs (nC)15@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)8|7
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)60|75
Maximum Gate Threshold Voltage (V)1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)10
Typical Input Capacitance @ Vds (pF)900@16V
Maximum Drain Source Resistance (mOhm)50@4.5V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 20V 10A 4-Pin(3+Tab) SOT-223 T/R
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