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MOSFETs NTH4L022N120M3S
onsemi
NTH4L022N120M3S
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| Material | SiC |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Automotive | No |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Dual Source |
| Product Category | Power MOSFET |
| Typical Fall Time (ns) | 13 |
| Typical Rise Time (ns) | 24 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 352000 |
| Typical Gate Charge @ Vgs (nC) | 151@18V |
| Maximum Gate Source Voltage (V) | 22 |
| Typical Turn-On Delay Time (ns) | 18 |
| Maximum Drain Source Voltage (V) | 1200 |
| Typical Turn-Off Delay Time (ns) | 48 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 68 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 3175@800V |
| Maximum Drain Source Resistance (mOhm) | 30@18V |
| Description |
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