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MOSFETs NTH4L080N120SC1
onsemi
NTH4L080N120SC1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant |
| Material | SiC |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 4 |
| Automotive | No |
| PCB changed | 4 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Dual Source |
| Package Width | 5.2(Max) |
| Package Height | 22.74(Max) |
| Package Length | 15.8(Max) |
| Product Category | Power MOSFET |
| Supplier Package | TO-247 |
| Maximum IDSS (uA) | 10 |
| Typical Fall Time (ns) | 7.14 |
| Typical Rise Time (ns) | 4.13 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 312000 |
| Typical Gate Charge @ Vgs (nC) | 46.6@20V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 6.21 |
| Maximum Drain Source Voltage (V) | 1200 |
| Typical Turn-Off Delay Time (ns) | 13.8 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 50.4 |
| Typical Input Capacitance @ Vds (pF) | 1286@1000V |
| Maximum Drain Source Resistance (mOhm) | 80.9(Typ)@20V |
| Maximum Gate Source Leakage Current (nA) | 250 |
| Description |
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