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NTHD3102CT1G
NTHD3102CT1G
MOSFETs NTHD3102CT1G
onsemi
NTHD3102CT1G
--
Diodes, Transistors and Thyristors
MOSFETs
NTHD3102CT1G.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeFlat
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Dual Drain
Package Width1.65
Package Height1.05
Package Length3.05
Product CategoryPower MOSFET
Supplier PackageChip FET
Process TechnologyTMOS
Standard Package NameChip FET
Typical Fall Time (ns)4.6@N Channel|29.9@P Channel
Typical Rise Time (ns)15.9@N Channel|16.9@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)600
Typical Gate Charge @ Vgs (nC)5.8@4.5V|6.6@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)7.2@N Channel|6.4@P Channel
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)16.4@N Channel|15.7@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4@N Channel|3.1@P Channel
Typical Input Capacitance @ Vds (pF)510@10V@N Channel|400@10V@P Channel
Maximum Drain Source Resistance (mOhm)45@4.5V@N Channel|80@4.5V@P Channel
Description
Trans MOSFET N/P-CH 20V 4A/3.1A 8-Pin Chip FET T/R
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