Tab | Tab |
PPAP | No |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Material | SiC |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 3 |
Automotive | No |
Lead Shape | Through Hole |
PCB changed | 3 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 4.7 |
Package Height | 20.57 |
Package Length | 15.62 |
Product Category | Power MOSFET |
Supplier Package | TO-247 |
Maximum IDSS (uA) | 100 |
Standard Package Name | TO-247 |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 11 |
Typical Rise Time (ns) | 57 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 535000 |
Typical Gate Charge @ Vgs (nC) | 203@20V |
Maximum Gate Source Voltage (V) | 25 |
Typical Output Capacitance (pF) | 260 |
Typical Turn-On Delay Time (ns) | 25 |
Maximum Drain Source Voltage (V) | 1200 |
Typical Gate Plateau Voltage (V) | 9 |
Typical Turn-Off Delay Time (ns) | 45 |
Typical Diode Forward Voltage (V) | 3.7 |
Typical Gate to Drain Charge (nC) | 47 |
Maximum Gate Threshold Voltage (V) | 4.3 |
Minimum Gate Threshold Voltage (V) | 1.8 |
Typical Gate Threshold Voltage (V) | 2.7 |
Typical Gate to Source Charge (nC) | 66 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 103 |
Operating Junction Temperature (°C) | -55 to 175 |
Typical Input Capacitance @ Vds (pF) | 2890@800V |
Typical Reverse Recovery Charge (nC) | 240 |
Maximum Drain Source Resistance (mOhm) | 28@20V |
Maximum Gate Source Leakage Current (nA) | 1000 |
Maximum Positive Gate Source Voltage (V) | 25 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 412 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 22@800V |
Description | |