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MOSFETs NTLJD3119CTAG
onsemi
NTLJD3119CTAG
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 6 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | P|N |
| Configuration | Dual |
| Package Width | 2 |
| Package Height | 0.75(Max) |
| Package Length | 2 |
| Product Category | Power MOSFET |
| Supplier Package | WDFN EP |
| Maximum IDSS (uA) | 1 |
| Process Technology | TMOS |
| Standard Package Name | DFN |
| Typical Fall Time (ns) | 19.1@P Channel|5.8@N Channel |
| Typical Rise Time (ns) | 13.2@P Channel|4.7@N Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2300 |
| Typical Gate Charge @ 10V (nC) | 3.7 |
| Typical Gate Charge @ Vgs (nC) | 5.5@4.5V@P Channel|3.7@4.5V@N Channel |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Output Capacitance (pF) | 91@P Channel|72@N Channel |
| Typical Turn-On Delay Time (ns) | 5.2@P Channel|3.8@N Channel |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 1.6@N Channel|1.7@P Channel |
| Typical Turn-Off Delay Time (ns) | 13.7@P Channel|11.1@N Channel |
| Maximum Diode Forward Voltage (V) | 1 |
| Typical Diode Forward Voltage (V) | 0.69@N Channel|0.75@P Channel |
| Typical Gate to Drain Charge (nC) | 1@N Channel|1.4@P Channel |
| Maximum Gate Threshold Voltage (V) | 1 |
| Minimum Gate Threshold Voltage (V) | 0.4 |
| Typical Gate Threshold Voltage (V) | 0.7 |
| Typical Gate to Source Charge (nC) | 1@P Channel|0.6@N Channel |
| Typical Reverse Recovery Time (ns) | 10.2@N Channel|16.2@P Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.3@P Channel|3.8@N Channel |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 531@10V@P Channel|271@10V@N Channel |
| Typical Reverse Recovery Charge (nC) | 5.7@P Channel|3@N Channel |
| Maximum Drain Source Resistance (mOhm) | 100@4.5V@P Channel|65@4.5V@N Channel |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 8 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 18@N Channel|20@P Channel |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.3 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 43@10V@N Channel|56@10V@P Channel |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 3.8@N Channel|3.3@P Channel |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 177 |
| Description |
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