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NTLJS3113PT1G
NTLJS3113PT1G
MOSFETs NTLJS3113PT1G
onsemi
NTLJS3113PT1G
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeNo Lead
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Package Width2
Package Height0.75(Max)
Package Length2
Product CategoryPower MOSFET
Supplier PackageWDFN EP
Maximum IDSS (uA)1
Standard Package NameDFN
Typical Fall Time (ns)56.5
Typical Rise Time (ns)17.5
Number of Elements per Chip1
Maximum Power Dissipation (mW)3300
Typical Gate Charge @ Vgs (nC)13@4.5V
Maximum Gate Source Voltage (V)±8
Typical Output Capacitance (pF)213
Typical Turn-On Delay Time (ns)6.9
Maximum Drain Source Voltage (V)20
Typical Gate Plateau Voltage (V)1.5
Typical Turn-Off Delay Time (ns)60
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.78
Typical Gate to Drain Charge (nC)2.9
Maximum Gate Threshold Voltage (V)1
Minimum Gate Threshold Voltage (V)0.45
Typical Gate Threshold Voltage (V)0.67
Typical Gate to Source Charge (nC)2.2
Typical Reverse Recovery Time (ns)70.8
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5.8
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)1329@16V
Typical Reverse Recovery Charge (nC)44
Maximum Drain Source Resistance (mOhm)40@4.5V
Maximum Gate Source Leakage Current (nA)1000
Maximum Positive Gate Source Voltage (V)8
Maximum Pulsed Drain Current @ TC=25°C (A)23
Maximum Power Dissipation on PCB @ TC=25°C (W)3.3
Typical Reverse Transfer Capacitance @ Vds (pF)120@16V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)5.8
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)180
Description
Trans MOSFET P-CH 20V 5.8A 6-Pin WDFN EP T/R
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