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NTMC083NP10M5L
NTMC083NP10M5L
MOSFETs NTMC083NP10M5L
onsemi
NTMC083NP10M5L
--
Diodes, Transistors and Thyristors
MOSFETs
NTMC083NP10M5L.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Dual Drain
Product CategoryPower MOSFET
Typical Fall Time (ns)6.2|4.6@N Channel|6.8|7@P Channel
Typical Rise Time (ns)8|2@N Channel|2.7|5.7@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)1600
Typical Gate Charge @ 10V (nC)5@N Channel|8.4@P Channel
Typical Gate Charge @ Vgs (nC)3@4.5V|5@10V@N Channel|8.4@10V|5.2@6V@P Channel
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8.4|5.7@N Channel|10.1|13.3@P Channel
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)8.9|11.2@N Channel|15.9|12.5@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.9@N Channel|2.4@P Channel
Typical Input Capacitance @ Vds (pF)222@50V@N Channel|525@50V@P Channel
Maximum Drain Source Resistance (MOhm)83@10V@N Channel|131@10V@P Channel
Description
Trans MOSFET N/P-CH 100V 2.9A/2.4A T/R
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