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NTMD3P03R2
NTMD3P03R2
MOSFETs NTMD3P03R2
onsemi
NTMD3P03R2
--
Diodes, Transistors and Thyristors
MOSFETs
NTMD3P03R2.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Maximum IDSS (uA)2
Standard Package NameSOP
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)35|45
Typical Rise Time (ns)16|42
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)16
Typical Gate Charge @ Vgs (nC)16@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)12|16
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)32|45
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.86
Typical Input Capacitance @ Vds (pF)520@24V
Maximum Drain Source Resistance (mOhm)85@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 30V 3.86A 8-Pin SOIC N T/R
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