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MOSFETs NTMFD4901NFT1G
onsemi
NTMFD4901NFT1G
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 8 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 6.1(Max) |
| Package Height | 1.05(Max) |
| Package Length | 5.1(Max) |
| Product Category | Power MOSFET |
| Supplier Package | DFN EP |
| Maximum IDSS (uA) | 1@Q 1|500@Q 2 |
| Standard Package Name | DFN |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 4|3@Q 1|7|5@Q 2 |
| Typical Rise Time (ns) | 15|14@Q 1|16|15@Q 2 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 3450 |
| Typical Gate Charge @ 10V (nC) | 19.1@Q 1|42.7@Q 2 |
| Typical Gate Charge @ Vgs (nC) | 19.1@10V|9.7@4.5V@Q 1|42.7@10V|20@4.5V@Q 2 |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 360@Q 1|1100@Q 2 |
| Typical Turn-On Delay Time (ns) | 9|6@Q 1|14|10@Q 2 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Gate Plateau Voltage (V) | 2.7 |
| Typical Turn-Off Delay Time (ns) | 14|17@Q 1|25|32@Q 2 |
| Maximum Diode Forward Voltage (V) | 1@Q 1|0.7@Q 2 |
| Typical Diode Forward Voltage (V) | 0.75@Q 1|0.45@Q 2 |
| Typical Gate to Drain Charge (nC) | 3.7@Q 1|5.3@Q 2 |
| Maximum Gate Threshold Voltage (V) | 2.2 |
| Minimum Gate Threshold Voltage (V) | 1.2 |
| Typical Gate to Source Charge (nC) | 3.3@Q 1|7.3@Q 2 |
| Typical Reverse Recovery Time (ns) | 23@Q 1|40@Q 2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 13.5@Q 1|23.4@Q 2 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 1150@15V@Q 1|2950@15V@Q 2 |
| Typical Reverse Recovery Charge (nC) | 12@Q 1|40@Q 2 |
| Maximum Drain Source Resistance (mOhm) | 6.5@10V@Q 1|2.35@10V@Q 2 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 60@Q 1|100@Q 2 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 3.45 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 105@15V@Q 1|82@15V@Q 2 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 13.5@Q 1|23.4@Q 2 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 113.2@Q 1|104@Q 2 |
| Description |
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