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MOSFETs NTMFD4C85NT1G
onsemi
NTMFD4C85NT1G
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 8 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 6(Max) |
| Package Height | 1.05(Max) |
| Package Length | 5.1(Max) |
| Product Category | Power MOSFET |
| Supplier Package | DFN EP |
| Maximum IDSS (uA) | 1 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 5.6|12.2@Q 2|15|4@Q 1 |
| Typical Rise Time (ns) | 27|22.7@Q 2|37|31.5@Q 1 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 3100 |
| Typical Gate Charge @ Vgs (nC) | 15@4.5V@Q 1|45.2@4.5V@Q 2 |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 19.5|12.6@Q 2|8@Q 1|10.3 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 20|25@Q 1|47|60@Q 2 |
| Maximum Gate Threshold Voltage (V) | 2.1 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 49.2@Q 2|25.4@Q 1 |
| Typical Input Capacitance @ Vds (pF) | 1960@15V@Q 1|6660@15V@Q 2 |
| Maximum Drain Source Resistance (MOhm) | 0.8@10V@Q 2|3@10V@Q 1 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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