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NTMFS0D6N03CT1G
NTMFS0D6N03CT1G
MOSFETs NTMFS0D6N03CT1G
onsemi
NTMFS0D6N03CT1G
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
Lead ShapeFlat
PCB changed5
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.9
Package Height1.05(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackageSO-FL EP
Maximum IDSS (uA)1
Standard Package NameDFN
Typical Fall Time (ns)19
Typical Rise Time (ns)12
Number of Elements per Chip1
Maximum Power Dissipation (mW)3900
Typical Gate Charge @ 10V (nC)145
Typical Gate Charge @ Vgs (nC)65@4.5V|145@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)5740
Typical Turn-On Delay Time (ns)24
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)2.7
Typical Turn-Off Delay Time (ns)89
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.75
Typical Gate to Drain Charge (nC)12
Maximum Gate Threshold Voltage (V)2.2
Minimum Gate Threshold Voltage (V)1.3
Typical Gate to Source Charge (nC)27
Typical Reverse Recovery Time (ns)97
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)60
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)10500@15V
Typical Reverse Recovery Charge (nC)135
Maximum Drain Source Resistance (MOhm)0.62@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)900
Maximum Power Dissipation on PCB @ TC=25°C (W)3.9
Typical Reverse Transfer Capacitance @ Vds (pF)161@15V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)60
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)38
Description
Trans MOSFET N-CH 30V 60A 5-Pin SO-FL EP T/R
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