Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
Packaging | Tape and Reel |
Automotive | No |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Triple Source |
Product Category | Power MOSFET |
Process Technology | Shielded Gate MOS |
Typical Fall Time (ns) | 6.3 |
Typical Rise Time (ns) | 7.2 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 2800 |
Typical Gate Charge @ 10V (nC) | 48 |
Typical Gate Charge @ Vgs (nC) | 29@6V|48@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 26.1 |
Maximum Drain Source Voltage (V) | 100 |
Typical Turn-Off Delay Time (ns) | 39 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 19 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 3900@50V |
Maximum Drain Source Resistance (mOhm) | 3.5@10V |
Description |