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NTMFS4H02NFT1G
NTMFS4H02NFT1G
MOSFETs NTMFS4H02NFT1G
onsemi
NTMFS4H02NFT1G
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
Lead ShapeFlat
PCB changed4
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain Triple Source
Package Width5.9
Package Height1.05(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackageSO-FL
Maximum IDSS (uA)500
Standard Package NameSO
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)4.93|7.72
Typical Rise Time (ns)46.7|35.7
Number of Elements per Chip1
Maximum Power Dissipation (mW)3130
Typical Gate Charge @ 10V (nC)40.9
Typical Gate Charge @ Vgs (nC)18.7@4.5|40.9@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)13.5|10
Maximum Drain Source Voltage (V)25
Typical Turn-Off Delay Time (ns)24.8|32.3
Maximum Gate Threshold Voltage (V)2.1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)37
Typical Input Capacitance @ Vds (pF)2652@12V
Maximum Drain Source Resistance (MOhm)1.4@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 25V 37A 5-Pin(4+Tab) SO-FL T/R
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