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NTMS4816NR2G
NTMS4816NR2G
MOSFETs NTMS4816NR2G
onsemi
NTMS4816NR2G
--
Diodes, Transistors and Thyristors
MOSFETs
NTMS4816NR2G.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Standard Package NameSOP
Typical Fall Time (ns)8
Typical Rise Time (ns)3.8
Number of Elements per Chip1
Maximum Power Dissipation (mW)1370
Typical Gate Charge @ Vgs (nC)9.2@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)21.6
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9
Typical Input Capacitance @ Vds (pF)1060@25V
Maximum Drain Source Resistance (MOhm)10@10V
Description
Trans MOSFET N-CH 30V 9A 8-Pin SOIC N T/R
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