PPAP | No |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
PCB changed | 8 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Triple Source |
Package Width | 7.9 |
Package Height | 1.15(Max) |
Package Length | 8 |
Product Category | Power MOSFET |
Supplier Package | TDFNW EP |
Maximum IDSS (uA) | 10 |
Standard Package Name | DFN |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 107 |
Typical Rise Time (ns) | 147 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 5000 |
Typical Gate Charge @ 10V (nC) | 341 |
Typical Gate Charge @ Vgs (nC) | 163@4.5V|341@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 9500 |
Typical Turn-On Delay Time (ns) | 110 |
Maximum Drain Source Voltage (V) | 40 |
Typical Gate Plateau Voltage (V) | 2.7 |
Typical Turn-Off Delay Time (ns) | 217 |
Maximum Diode Forward Voltage (V) | 1.2 |
Typical Diode Forward Voltage (V) | 0.75 |
Typical Gate to Drain Charge (nC) | 52.1 |
Maximum Gate Threshold Voltage (V) | 2.5 |
Minimum Gate Threshold Voltage (V) | 1 |
Typical Gate to Source Charge (nC) | 51 |
Typical Reverse Recovery Time (ns) | 117 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 79.8 |
Operating Junction Temperature (°C) | -55 to 175 |
Typical Input Capacitance @ Vds (pF) | 20600@20V |
Typical Reverse Recovery Charge (nC) | 336 |
Maximum Drain Source Resistance (MOhm) | 0.4@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 900 |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 5 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 390@20V |
Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 79.8 |
Description | |