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NTMTS0D4N04CLTXG
NTMTS0D4N04CLTXG
MOSFETs NTMTS0D4N04CLTXG
onsemi
NTMTS0D4N04CLTXG
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width7.9
Package Height1.15(Max)
Package Length8
Product CategoryPower MOSFET
Supplier PackageTDFNW EP
Maximum IDSS (uA)10
Standard Package NameDFN
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)107
Typical Rise Time (ns)147
Number of Elements per Chip1
Maximum Power Dissipation (mW)5000
Typical Gate Charge @ 10V (nC)341
Typical Gate Charge @ Vgs (nC)163@4.5V|341@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)9500
Typical Turn-On Delay Time (ns)110
Maximum Drain Source Voltage (V)40
Typical Gate Plateau Voltage (V)2.7
Typical Turn-Off Delay Time (ns)217
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.75
Typical Gate to Drain Charge (nC)52.1
Maximum Gate Threshold Voltage (V)2.5
Minimum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)51
Typical Reverse Recovery Time (ns)117
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)79.8
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)20600@20V
Typical Reverse Recovery Charge (nC)336
Maximum Drain Source Resistance (MOhm)0.4@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)900
Maximum Power Dissipation on PCB @ TC=25°C (W)5
Typical Reverse Transfer Capacitance @ Vds (pF)390@20V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)79.8
Description
Trans MOSFET N-CH 40V 79.8A 8-Pin TDFNW EP T/R
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