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MOSFETs NTNS2K1P021ZTCG
onsemi
NTNS2K1P021ZTCG
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Package Width | 0.42 |
| Package Height | 0.38 |
| Package Length | 0.62 |
| Product Category | Small Signal |
| Supplier Package | XDFN |
| Maximum IDSS (uA) | 0.1 |
| Typical Fall Time (ns) | 171 |
| Typical Rise Time (ns) | 71 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 166 |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Turn-On Delay Time (ns) | 37 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 280 |
| Maximum Gate Threshold Voltage (V) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.127 |
| Typical Input Capacitance @ Vds (pF) | 12.8@15V |
| Maximum Drain Source Resistance (mOhm) | 5000@4.5V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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