Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Packaging | Tube |
Automotive | No |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Product Category | Power MOSFET |
Process Technology | SuperFET III |
Typical Fall Time (ns) | 4.2 |
Typical Rise Time (ns) | 8.2 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 29000 |
Typical Gate Charge @ 10V (nC) | 24 |
Typical Gate Charge @ Vgs (nC) | 24@10V |
Maximum Gate Source Voltage (V) | ±30 |
Typical Turn-On Delay Time (ns) | 18 |
Maximum Drain Source Voltage (V) | 650 |
Typical Turn-Off Delay Time (ns) | 54 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 13 |
Typical Input Capacitance @ Vds (pF) | 1261@400V |
Maximum Drain Source Resistance (mOhm) | 250@10V |
Description |