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NTPF250N65S3H
NTPF250N65S3H
MOSFETs NTPF250N65S3H
onsemi
NTPF250N65S3H
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTube
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Process TechnologySuperFET III
Typical Fall Time (ns)4.2
Typical Rise Time (ns)8.2
Number of Elements per Chip1
Maximum Power Dissipation (mW)29000
Typical Gate Charge @ 10V (nC)24
Typical Gate Charge @ Vgs (nC)24@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)18
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)54
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)13
Typical Input Capacitance @ Vds (pF)1261@400V
Maximum Drain Source Resistance (mOhm)250@10V
Description
Trans MOSFET N-CH 650V 13A Tube
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