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MOSFETs NTTFS1D2N02P1E
onsemi
NTTFS1D2N02P1E
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 3.4(Max) |
| Package Height | 0.75(Max) |
| Package Length | 3.4(Max) |
| Product Category | Power MOSFET |
| Supplier Package | PQFN EP |
| Standard Package Name | QFN |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 9.8|7.9 |
| Typical Rise Time (ns) | 13|4.2 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2700 |
| Typical Gate Charge @ Vgs (nC) | 24@4.5V |
| Maximum Gate Source Voltage (V) | 16 |
| Typical Turn-On Delay Time (ns) | 14.6|14.8 |
| Maximum Drain Source Voltage (V) | 25 |
| Typical Turn-Off Delay Time (ns) | 38.5|59 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 41 |
| Typical Input Capacitance @ Vds (pF) | 4040@13V |
| Maximum Drain Source Resistance (mOhm) | 1@10V |
| Description |
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