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MOSFETs NTTFS5D9N08HTWG
onsemi
NTTFS5D9N08HTWG
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 3.4(Max) |
| Package Height | 0.75(Max) |
| Package Length | 3.4(Max) |
| Product Category | Power MOSFET |
| Supplier Package | PQFN EP |
| Maximum IDSS (uA) | 10 |
| Process Technology | PowerTrench |
| Standard Package Name | QFN |
| Typical Fall Time (ns) | 5.8 |
| Typical Rise Time (ns) | 8.7 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2700 |
| Typical Gate Charge @ 10V (nC) | 31 |
| Typical Gate Charge @ Vgs (nC) | 20@6V|31@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 17.2 |
| Maximum Drain Source Voltage (V) | 80 |
| Typical Turn-Off Delay Time (ns) | 21.6 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 13 |
| Typical Input Capacitance @ Vds (pF) | 2040@40V |
| Maximum Drain Source Resistance (mOhm) | 5.9@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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