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NTZD5110NT1G
NTZD5110NT1G
MOSFETs NTZD5110NT1G
onsemi
NTZD5110NT1G
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Diodes, Transistors and Thyristors
MOSFETs
NTZD5110NT1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeFlat
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width1.2
Package Height0.55
Package Length1.6
Product CategorySmall Signal
Supplier PackageSOT-563
Maximum IDSS (uA)1
Standard Package NameSOT
Typical Fall Time (ns)30.6
Typical Rise Time (ns)7.3
Number of Elements per Chip2
Maximum Power Dissipation (mW)280
Typical Gate Charge @ Vgs (nC)0.7@4.5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)4.2
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)2.7
Typical Turn-Off Delay Time (ns)63.7
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.8
Typical Gate to Drain Charge (nC)0.1
Maximum Gate Threshold Voltage (V)2.5
Minimum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)0.3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.294
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)24.5@20V
Maximum Drain Source Resistance (mOhm)1600@10V
Maximum Gate Source Leakage Current (nA)10000
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)0.59
Maximum Power Dissipation on PCB @ TC=25°C (W)0.28
Typical Reverse Transfer Capacitance @ Vds (pF)2.2@20V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)0.294
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)500
Description
Trans MOSFET N-CH 60V 0.294A 6-Pin SOT-563 T/R
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