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NVB25P06T4G
NVB25P06T4G
MOSFETs NVB25P06T4G
onsemi
NVB25P06T4G
--
Diodes, Transistors and Thyristors
MOSFETs
NVB25P06T4G.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPYes
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.29(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)10
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)190
Typical Rise Time (ns)72
Number of Elements per Chip1
Maximum Power Dissipation (mW)120000
Typical Gate Charge @ 10V (nC)33
Typical Gate Charge @ Vgs (nC)33@10V
Maximum Gate Source Voltage (V)±15
Typical Output Capacitance (pF)345
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)6
Typical Turn-Off Delay Time (ns)43
Maximum Diode Forward Voltage (V)2.5
Typical Diode Forward Voltage (V)1.8
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate Threshold Voltage (V)2.8
Typical Reverse Recovery Time (ns)70
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)27.5
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)1200@25V
Typical Reverse Recovery Charge (nC)200
Maximum Drain Source Resistance (mOhm)82@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)15
Maximum Pulsed Drain Current @ TC=25°C (A)80
Typical Reverse Transfer Capacitance @ Vds (pF)90@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)63.2
Description
Trans MOSFET P-CH 60V 27.5A Automotive 3-Pin(2+Tab) D2PAK T/R
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