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NVD5867NLT4G
NVD5867NLT4G
MOSFETs NVD5867NLT4G
onsemi
NVD5867NLT4G
--
Diodes, Transistors and Thyristors
MOSFETs
NVD5867NLT4G.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPYes
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)2.4
Typical Rise Time (ns)12.6
Number of Elements per Chip1
Maximum Power Dissipation (mW)3300
Typical Gate Charge @ 10V (nC)15
Typical Gate Charge @ Vgs (nC)7.6@4.5V|15@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)6.5
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)18.2
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6
Typical Input Capacitance @ Vds (pF)675@25V
Maximum Drain Source Resistance (MOhm)39@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 60V 6A Automotive 3-Pin(2+Tab) DPAK T/R
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