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NVF3055L108T1G
NVF3055L108T1G
MOSFETs NVF3055L108T1G
onsemi
NVF3055L108T1G
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPYes
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain
Package Width3.5
Package Height1.57
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageSOT-223
Maximum IDSS (uA)1
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)27
Typical Rise Time (ns)35
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)2100
Typical Gate Charge @ Vgs (nC)7.6@5V
Maximum Gate Source Voltage (V)±15
Typical Output Capacitance (pF)112
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)3
Typical Turn-Off Delay Time (ns)22
Maximum Diode Forward Voltage (V)1
Typical Diode Forward Voltage (V)0.87
Maximum Gate Threshold Voltage (V)2
Minimum Gate Threshold Voltage (V)1
Typical Gate Threshold Voltage (V)1.68
Typical Reverse Recovery Time (ns)35
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)313@25V
Typical Reverse Recovery Charge (nC)44
Maximum Drain Source Resistance (mOhm)120@5V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)15
Maximum Pulsed Drain Current @ TC=25°C (A)9
Maximum Power Dissipation on PCB @ TC=25°C (W)2.1
Typical Reverse Transfer Capacitance @ Vds (pF)40@25V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)3
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)114
Description
Trans MOSFET N-CH 60V 3A Automotive 4-Pin(3+Tab) SOT-223 T/R
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