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NVGS4111PT1G
NVGS4111PT1G
MOSFETs NVGS4111PT1G
onsemi
NVGS4111PT1G
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Diodes, Transistors and Thyristors
MOSFETs
NVGS4111PT1G.pdf
Specification
Product AttributeAttribute Value
PPAPYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveYes
Lead ShapeGull-wing
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Package Width1.5
Package Height0.94
Package Length3
Product CategoryPower MOSFET
Supplier PackageTSOP
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameSOP
Typical Fall Time (ns)22
Typical Rise Time (ns)15|9
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)15.25
Typical Gate Charge @ Vgs (nC)15.25@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)140
Typical Turn-On Delay Time (ns)9|11
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)3.2
Typical Turn-Off Delay Time (ns)28|38
Typical Gate to Drain Charge (nC)3.4
Maximum Gate Threshold Voltage (V)3
Minimum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)2.6
Typical Reverse Recovery Time (ns)17
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.7
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)750@15V
Typical Reverse Recovery Charge (nC)8
Maximum Drain Source Resistance (mOhm)60@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)15
Maximum Power Dissipation on PCB @ TC=25°C (W)2
Typical Reverse Transfer Capacitance @ Vds (pF)105@15V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)3.7
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)200
Description
Trans MOSFET P-CH 30V 3.7A Automotive 6-Pin TSOP T/R
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