PPAP | Yes |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 6 |
Automotive | Yes |
Lead Shape | Gull-wing |
PCB changed | 6 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single Quad Drain |
Package Width | 1.5 |
Package Height | 0.94 |
Package Length | 3 |
Product Category | Power MOSFET |
Supplier Package | TSOP |
Maximum IDSS (uA) | 1 |
Process Technology | TMOS |
Standard Package Name | SOP |
Typical Fall Time (ns) | 22 |
Typical Rise Time (ns) | 15|9 |
Supplier Temperature Grade | Automotive |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 2000 |
Typical Gate Charge @ 10V (nC) | 15.25 |
Typical Gate Charge @ Vgs (nC) | 15.25@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 140 |
Typical Turn-On Delay Time (ns) | 9|11 |
Maximum Drain Source Voltage (V) | 30 |
Typical Gate Plateau Voltage (V) | 3.2 |
Typical Turn-Off Delay Time (ns) | 28|38 |
Typical Gate to Drain Charge (nC) | 3.4 |
Maximum Gate Threshold Voltage (V) | 3 |
Minimum Gate Threshold Voltage (V) | 1 |
Typical Gate to Source Charge (nC) | 2.6 |
Typical Reverse Recovery Time (ns) | 17 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 3.7 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 750@15V |
Typical Reverse Recovery Charge (nC) | 8 |
Maximum Drain Source Resistance (mOhm) | 60@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 15 |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 2 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 105@15V |
Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 3.7 |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 200 |
Description | |