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NVH4L080N120SC1
NVH4L080N120SC1
MOSFETs NVH4L080N120SC1
onsemi
NVH4L080N120SC1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPYes
SVHCYes
EU RoHSCompliant with Exemption
MaterialSiC
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count4
AutomotiveYes
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.2(Max)
Package Height22.74(Max)
Package Length15.8(Max)
Product CategoryPower MOSFET
Supplier PackageTO-247
Maximum IDSS (uA)100
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)5.4
Typical Rise Time (ns)4.2
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)170000
Typical Gate Charge @ Vgs (nC)56@20V
Maximum Gate Source Voltage (V)25
Typical Turn-On Delay Time (ns)9
Maximum Drain Source Voltage (V)1200
Typical Turn-Off Delay Time (ns)26.8
Maximum Gate Threshold Voltage (V)4.3
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)29
Typical Input Capacitance @ Vds (pF)1112@800V
Maximum Drain Source Resistance (mOhm)110@20V
Maximum Gate Source Leakage Current (nA)1000
Description
Trans MOSFET N-CH SiC 1.2KV 29A 4-Pin(4+Tab) TO-247 Tube
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