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NVJS4151PT1G
NVJS4151PT1G
MOSFETs NVJS4151PT1G
onsemi
NVJS4151PT1G
--
Diodes, Transistors and Thyristors
MOSFETs
NVJS4151PT1G.pdf
Specification
Product AttributeAttribute Value
PPAPYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveYes
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Package Width1.25
Package Height0.9
Package Length2
Product CategoryPower MOSFET
Supplier PackageSC-88
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameSC
Typical Fall Time (ns)4200
Typical Rise Time (ns)1700
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)1200
Typical Gate Charge @ Vgs (nC)10@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)850
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)2700
Maximum Gate Threshold Voltage (V)1.2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.2
Typical Input Capacitance @ Vds (pF)850@10V
Maximum Drain Source Resistance (mOhm)67@4.5V
Maximum Gate Source Leakage Current (nA)10000000
Description
Trans MOSFET P-CH 20V 3.2A Automotive 6-Pin SC-88 T/R
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