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NVMD4N03R2G
NVMD4N03R2G
MOSFETs NVMD4N03R2G
onsemi
NVMD4N03R2G
--
Diodes, Transistors and Thyristors
MOSFETs
NVMD4N03R2G.pdf
Specification
Product AttributeAttribute Value
PPAPYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveYes
Lead ShapeGull-wing
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Maximum IDSS (uA)10
Standard Package NameSOP
Typical Fall Time (ns)10
Typical Rise Time (ns)14
Supplier Temperature GradeAutomotive
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)8
Typical Gate Charge @ Vgs (nC)8@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)95
Typical Turn-On Delay Time (ns)7
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)3.4
Typical Turn-Off Delay Time (ns)16
Maximum Diode Forward Voltage (V)1
Typical Diode Forward Voltage (V)0.82
Maximum Gate Threshold Voltage (V)3
Minimum Gate Threshold Voltage (V)1
Typical Gate Threshold Voltage (V)1.9
Typical Reverse Recovery Time (ns)14
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)285@20V
Typical Reverse Recovery Charge (nC)8
Maximum Drain Source Resistance (MOhm)60@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)12
Maximum Power Dissipation on PCB @ TC=25°C (W)2
Typical Reverse Transfer Capacitance @ Vds (pF)35@20V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)62.5
Description
Trans MOSFET N-CH 30V 4A Automotive 8-Pin SOIC N T/R
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