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MOSFETs NVMFD6H846NLWFT1G
onsemi
NVMFD6H846NLWFT1G
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Yes |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Automotive | Yes |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual Dual Drain |
| Product Category | Power MOSFET |
| Maximum IDSS (uA) | 10 |
| Typical Fall Time (ns) | 7 |
| Typical Rise Time (ns) | 40 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 3200 |
| Typical Gate Charge @ 10V (nC) | 17 |
| Typical Gate Charge @ Vgs (nC) | 17@10V|8@4.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 10 |
| Maximum Drain Source Voltage (V) | 80 |
| Typical Turn-Off Delay Time (ns) | 20 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 9.4 |
| Typical Input Capacitance @ Vds (pF) | 900@40V |
| Maximum Drain Source Resistance (mOhm) | 15@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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