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MOSFETs NVMFSC1D6N06CL
onsemi
NVMFSC1D6N06CL
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Yes |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Reel |
| Pin Count | 8 |
| Automotive | Yes |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 5.8 |
| Package Height | 0.95(Max) |
| Package Length | 4.9 |
| Product Category | Power MOSFET |
| Supplier Package | DFN EP |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 14.1 |
| Typical Rise Time (ns) | 55.6 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 4100 |
| Typical Gate Charge @ 10V (nC) | 91 |
| Typical Gate Charge @ Vgs (nC) | 41@4.5V|91@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 14.5 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 47.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 35 |
| Typical Input Capacitance @ Vds (pF) | 6660@25V |
| Maximum Drain Source Resistance (mOhm) | 1.5@10V |
| Description |
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